The results show that the sidegating threshold voltage is higher when adjacent devices are isolated by boron implantation, which means that boron implantation significantly improves the electrical isolation between devices and reduces the sidegating effect.
因此，采用注入隔离工艺可以减小器件的旁栅效应。
参考来源 - GaAs MESFET器件与光通信GaAs电路的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
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